New Providence, NJ, United States of America

Simon M Sze


Average Co-Inventor Count = 2.3

ph-index = 6

Forward Citations = 174(Granted Patents)


Location History:

  • Murray Hill, NJ (US) (1976 - 1981)
  • New Providence, NJ (US) (1982 - 1988)
  • Berkeley Heights, NJ (US) (1986 - 1988)

Company Filing History:


Years Active: 1976-1988

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7 patents (USPTO):Explore Patents

Title: Simon M Sze: Innovator in Semiconductor Technology

Introduction

Simon M Sze is a prominent inventor known for his significant contributions to semiconductor technology. He is based in New Providence, NJ (US) and holds a total of 7 patents. His work has greatly influenced the development of semiconductor devices and fabrication methods.

Latest Patents

One of his latest patents involves Semiconductor-on-insulator (SOI) devices and an SOI IC fabrication method. This innovative SOI device allows for the avoidance of the kink effect while enabling the regulation of threshold voltage. The device features an electrically conductive pathway that extends from the active volume to a non-active region of the substrate. This design facilitates the communication of a back-gate bias and the conduction of kink-inducing charges away from the active volume. Additionally, the new fabrication method allows for the creation of SOI ICs using existing circuit designs and pattern delineating apparatus, such as IC mask sets. It involves forming a precursor substrate surface with islands of insulating material surrounded by crystallization seeding areas of single crystal semiconductor material. The process is designed to ensure minimal displacement of the islands during crystallization.

Another notable patent by Simon M Sze is a method for making semiconductor crystal films. This method utilizes a zone melting technique to create single-crystal structures on a dielectric substrate. The process begins at a seed surface and extends across the dielectric surface through melting and resolidifying. Melting is achieved by focusing optical radiation onto an elongated zone, which is then moved to locally melt successive portions of the precursor material. This method is effective under controlled atmospheric conditions and can encapsulate the layer being crystallized to protect it from exposure.

Career Highlights

Throughout his career, Simon M Sze has worked with esteemed organizations such as Bell Telephone Laboratories and AT&T Bell Laboratories. His experience in these companies has allowed him to refine his expertise in semiconductor technology and contribute to groundbreaking innovations.

Collaborations

Simon M Sze has collaborated with notable colleagues, including Kwok K Ng and Martin P Lepselter. These partnerships have further enriched his work and expanded the impact of his inventions in the field of semiconductor technology.

Conclusion

Simon M Sze's contributions to semiconductor technology through his patents and career achievements highlight his role as a leading inventor in the industry. His innovative approaches continue to shape the future of semiconductor devices

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