The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 1988
Filed:
Sep. 02, 1986
Avid Kamgar, Millington, NJ (US);
Ernest Labate, South Plainfield, NJ (US);
Joseph R Ligenza, Flanders, NJ (US);
Simon M Sze, New Providence, NJ (US);
American Telephone and Telegraph Company, AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
Semiconductor crystal films on a dielectric substrate are advantageously made by a zone melting method. Single-crystal structure is initiated at a seed surface, and made to extend across a dielectric surface by melting and resolidifying. Melting is effected upon irradiation with optical radiation which is focused onto an elongated zone; the zone is moved so as to locally melt successive portions of a layer of precursor material which may be amorphous or polycrystalline. The use of incoherent radiation is convenient, and focusing is typically by using a reflector. The process is conveniently effected under a controlled atmosphere and the layer being crystallized may be encapsulated so that no free semiconductor surface is exposed to an atmosphere.