Silvanus S Lau

Title: Silvanus S Lau: Innovator in Gallium Nitride Technology

Introduction

Silvanus S Lau is a prominent inventor based in San Diego, California. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of gallium nitride (GaN) devices. His innovative work has led to advancements in high-frequency and high-power applications.

Latest Patents

Silvanus S Lau holds a patent for a gallium nitride-based high electron mobility transistor (HFET) and a method for fabricating it. The patent describes a GaN-based HFET that includes a set of layers all having a common face polarity, either Ga-face or N-face. One of the layers is a thin barrier layer with a positive charge on one face and a negative charge on the other. This configuration causes a potential change that prevents electron flow from the channel layer into the buffer layer. Additionally, the GaN-based HFET can be fabricated without a top barrier layer to create an inverted GaN-based HFET.

Career Highlights

Silvanus S Lau is affiliated with the University of California, where he has been involved in cutting-edge research and development in semiconductor technologies. His work has not only contributed to academic knowledge but has also had practical implications in various industries.

Collaborations

Some of his notable coworkers include Edward T Yu and Peter M Asbeck, who have collaborated with him on various projects related to semiconductor devices and materials.

Conclusion

Silvanus S Lau's contributions to gallium nitride technology exemplify the innovative spirit of modern inventors. His work continues to influence the field of semiconductor technology and paves the way for future advancements.