University of California

Silvanus S Lau

Peter M Asbeck

Xiaozhong Dang

Edward T Yu

A GaN-based HFET includes a set of layers all having a common face polarity, i.e., all being either Ga-face or N-face. One of the layers is a thin barrier layer having a first face with a positive charge and a second face with a negative charge thereby causing a potential change to occur between the two faces. The if potential change causes the barrier layer to prevent electron flow from a channel layer into a buffer layer. The GaN-based HFET may also be fabricated without a top barrier layer to obtain an inverted GaN-based HFET.

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San Diego, CA, United States of America

Silvanus S Lau