The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2003
Filed:
Jul. 30, 2001
Applicant:
Inventors:
Edward T. Yu, San Diego, CA (US);
Peter M. Asbeck, San Diego, CA (US);
Silvanus S. Lau, San Diego, CA (US);
Xiaozhong Dang, Fremont, CA (US);
Assignee:
The Regents of the University of California, Oakland, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1072 ; H01L 3/1109 ; H01L 3/10328 ; H01L 3/10336 ; H01L 2/920 ; H01L 3/10304 ;
U.S. Cl.
CPC ...
H01L 3/1072 ; H01L 3/1109 ; H01L 3/10328 ; H01L 3/10336 ; H01L 2/920 ; H01L 3/10304 ;
Abstract
A GaN-based HFET includes a set of layers all having a common face polarity, i.e., all being either Ga-face or N-face. One of the layers is a thin barrier layer having a first face with a positive charge and a second face with a negative charge thereby causing a potential change to occur between the two faces. The if potential change causes the barrier layer to prevent electron flow from a channel layer into a buffer layer. The GaN-based HFET may also be fabricated without a top barrier layer to obtain an inverted GaN-based HFET.