Edward T Yu

Title: The Innovations of Edward T Yu

Introduction

Edward T Yu is a prominent inventor based in San Diego, California. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of gallium nitride-based high electron mobility transistors (HFETs). His work has implications for various applications in electronics and power devices.

Latest Patents

One of Edward T Yu's notable patents is for a gallium nitride-based HFET and a method for fabricating it. This invention includes a set of layers that all have a common face polarity, either Ga-face or N-face. A key feature of this HFET is a thin barrier layer that possesses a first face with a positive charge and a second face with a negative charge. This configuration causes a potential change between the two faces, which effectively prevents electron flow from a channel layer into a buffer layer. Additionally, the GaN-based HFET can be fabricated without a top barrier layer to create an inverted GaN-based HFET.

Career Highlights

Edward T Yu is affiliated with the University of California, where he continues to advance research in semiconductor technologies. His work has garnered attention for its innovative approach to improving the efficiency and performance of electronic devices.

Collaborations

Some of his notable coworkers include Peter M Asbeck and Silvanus S Lau, who have collaborated with him on various projects related to semiconductor technology.

Conclusion

Edward T Yu's contributions to the field of gallium nitride-based HFETs represent a significant advancement in semiconductor technology. His innovative work continues to influence the development of more efficient electronic devices.