Beijing, China

Shushen Li

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Chinese Academy of Sciences. Active years: 2026.

USPTO Granted Patents = 2 

% Patents Active = 50.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Shushen Li: Innovator in Semiconductor Fabrication

Introduction

Shushen Li is a prominent inventor based in Beijing, China. He has made significant contributions to the field of semiconductor technology. His innovative work focuses on the fabrication methods for semiconductor structures, particularly in the realm of quantum computing.

Latest Patents

Shushen Li holds a patent for a "Fabrication method for semiconductor structure." This patent describes a method that includes providing a substrate and growing a germanium quantum well on it. The germanium quantum well is an inclined quantum well structure grown in a [110] direction. It is fabricated using a complementary metal oxide semiconductor process. Additionally, the method involves creating a two-dimensional gate-defined quantum dot within the germanium quantum well. He has 1 patent to his name.

Career Highlights

Li is affiliated with the Chinese Academy of Sciences, where he conducts his research and development. His work has been instrumental in advancing semiconductor technologies, particularly those related to quantum computing.

Collaborations

Shushen Li collaborates with notable colleagues, including Shan Guan and Junwei Luo. Their combined expertise contributes to the innovative projects at the Chinese Academy of Sciences.

Conclusion

Shushen Li's contributions to semiconductor fabrication highlight his role as a key innovator in the field. His work not only advances technology but also paves the way for future developments in quantum computing.

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