The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
May. 22, 2023
Applicant:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing, CN;
Inventors:
Junwei Luo, Beijing, CN;
Jiaxin Xiong, Beijing, CN;
Yang Liu, Beijing, CN;
Shan Guan, Beijing, CN;
Shushen Li, Beijing, CN;
Assignee:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 48/00 (2025.01); H10D 62/815 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H10D 48/383 (2025.01); H10D 62/8161 (2025.01); H10D 62/832 (2025.01);
Abstract
A method for fabricating a semiconductor structure having an enhanced hole linear Rashba spin-orbit coupling effect includes: providing a substrate; and growing a germanium quantum well on the substrate. A silicon atomic layer is inserted at an interface between a well and a barrier of the germanium quantum well. The silicon atomic layer includes one or more monolayers.