The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2026

Filed:

May. 24, 2023
Applicant:

Institute of Semiconductors, Chinese Academy of Sciences, Beijing, CN;

Inventors:

Junwei Luo, Beijing, CN;

Jiaxin Xiong, Beijing, CN;

Yang Liu, Beijing, CN;

Shan Guan, Beijing, CN;

Shushen Li, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 48/00 (2025.01); G06N 10/40 (2022.01); H10D 62/40 (2025.01); H10D 62/822 (2025.01);
U.S. Cl.
CPC ...
H10D 48/383 (2025.01); G06N 10/40 (2022.01); H10D 48/3835 (2025.01); H10D 62/405 (2025.01); H10D 62/822 (2025.01);
Abstract

A fabrication method for a semiconductor structure with a hole spin qubit includes: providing a substrate; growing a germanium quantum well on the substrate, in which the germanium quantum well is an inclined quantum well structure grown in a [110] direction, and the germanium quantum well is grown by a complementary metal oxide semiconductor process; and fabricating a two-dimensional gate-defined quantum dot in the germanium quantum well.


Find Patent Forward Citations

Luo, Junwei. (2026). Fabrication method for semiconductor structure (U.S. Patent No. 12568659). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12568659

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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