Wuhan, China

Shuo Zhang

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shuo Zhang. Retrieved from https://idiyas.com/inventor/shuo-zhang-7iuqgn8i

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Shuo Zhang: Inventor in 3D Memory Technology.

Introduction

Shuo Zhang is an inventor based in Wuhan, China, associated with Yangtze Memory Technologies Co., Ltd. His work includes an invention related to three-dimensional memory devices and their measurement.

Latest Patents

The provided information lists one patent for Zhang: “3D Memory Device, Measurement Method Thereof, and Film Measurement Device.” The patent describes a 3D memory device with a stack structure comprising a first stack and a second stack above it, as well as a barrier layer positioned in a channel hole in the first stack. The disclosed subject matter also includes methods and equipment for measurement.

Career Highlights

Zhang’s listed patent reflects work in memory-device architecture and measurement technology. The information provided associates his invention with Yangtze Memory Technologies Co., Ltd.

Collaborations

Fengrui Li and Yuanxiang Zou are identified as Zhang’s coworkers. The provided information does not specify their roles in the patent or the extent of their collaboration.

Conclusion

Shuo Zhang’s listed invention concerns 3D memory-device structure and measurement, highlighting his connection to memory technology development in Wuhan.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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