The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Dec. 30, 2022
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Fengrui Li, Wuhan, CN;
Shuo Zhang, Wuhan, CN;
Yuanxiang Zou, Wuhan, CN;
Wei Zhang, Wuhan, CN;
Yi Zhou, Wuhan, CN;
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); G01B 11/06 (2006.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); G01B 11/06 (2013.01); H10B 43/35 (2023.02);
Abstract
A three-dimensional (3D) memory device includes a stack structure including a first stack structure and a second stack structure over the first stack structure, and a barrier layer disposed in a first channel hole in the first stack structure.
Li, Fengrui. (2026). 3d memory device, measurement method thereof, and film measurement device (U.S. Patent No. 12701698). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12701698
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile