This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Fengrui Li: Inventor in 3D Memory Technology
Introduction
Fengrui Li is an inventor based in Wuhan, China. His work includes a patent related to three-dimensional memory devices and measurement technologies.
Latest Patents
Li is associated with 1 patent: “3D Memory Device, Measurement Method Thereof, and Film Measurement Device.” The invention describes a 3D memory device with a stack structure comprising a first stack and a second stack above it, as well as a barrier layer positioned in a channel hole in the first stack.
Career Highlights
Li works at Yangtze Memory Technologies Co., Ltd., a company focused on memory technology. His patent reflects work involving 3D memory structures and methods for measuring films.
Collaborations
Li’s listed coworkers include Shuo Zhang and Yuanxiang Zou.
Conclusion
Fengrui Li’s patent connects his work at Yangtze Memory Technologies Co., Ltd. with advances in 3D memory device design and measurement.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile