This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignee: Fuji Electric., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Shunya Hayashida: Semiconductor Manufacturing Inventor.
Introduction
Shunya Hayashida is an inventor based in Matsumoto, Japan. His patent work concerns semiconductor device manufacturing, including processes for forming and patterning aluminum alloy films.
Latest Patents
The provided information lists one patent for Hayashida: Method of Manufacturing Semiconductor Device. The method involves forming a MOS surface structure on a semiconductor substrate, partially covering it with an interlayer insulating film, and depositing an aluminum alloy film over the structure. A resist film is then formed and used as a mask to pattern the alloy film before the resist is removed. The process addresses a convex-shaped defect in the aluminum alloy film.
Career Highlights
Hayashida is associated with Fuji Electric Co., Ltd. His listed patent reflects work on semiconductor fabrication methods. The supplied information credits him with 1 patent.
Collaborations
Noriaki Noji and Naoko Kodama are identified as Hayashida’s coworkers.
Conclusion
Shunya Hayashida’s listed invention focuses on a manufacturing process for semiconductor devices, and his patent record connects this work with Fuji Electric Co., Ltd.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile