The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Feb. 23, 2024
Fuji Electric Co., Ltd., Kawasaki, JP;
Noriaki Noji, Nagano-city, JP;
Naoko Kodama, Matsumoto-city, JP;
Kazuhiro Kitahara, Matsumoto-city, JP;
Tatsuya Hashimoto, Azumino-city, JP;
Ryota Kataoka, Matsumoto-city, JP;
Shunya Hayashida, Matsumoto-city, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A method of manufacturing a semiconductor device includes forming a surface structure having a MOS structure in a semiconductor substrate; forming an interlayer insulating film partially covering the surface structure; forming an aluminum alloy film in contact with the surface structure and covering an entire area where the surface structure, including the interlayer insulating film, is formed; forming a resist film covering the surface of the aluminum alloy film so as to have a thickness partially exposing a convex-shaped defect of the aluminum alloy film; patterning the aluminum alloy film using the resist film as a mask; and removing the resist film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile