This inventor holds 2 USPTO granted patents and 3 published patent applications. Top assignee: Fuji Electric., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Ryota Kataoka: Semiconductor Manufacturing Inventor.
Introduction
Ryota Kataoka is an inventor based in Matsumoto, Japan. His patent work concerns semiconductor-device manufacturing.
Latest Patents
Kataoka is associated with 1 patent, titled “Method of Manufacturing Semiconductor Device.” The invention describes forming a MOS surface structure on a semiconductor substrate, partially covering it with an interlayer insulating film, and applying an aluminum alloy film over the structure. A resist film is then formed with a thickness that partially exposes a convex-shaped defect in the alloy film. The alloy film is patterned using the resist as a mask, after which the resist is removed.
Career Highlights
Kataoka’s listed patent is associated with Fuji Electric Co., Ltd. It focuses on a manufacturing process for semiconductor devices.
Collaborations
Kataoka’s listed coworkers include Noriaki Noji and Naoko Kodama.
Conclusion
Ryota Kataoka’s patent record highlights his contribution to semiconductor manufacturing through a process addressing the formation and patterning of aluminum alloy films.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile