Company Filing History:
Years Active: 1990-1998
Title: Shunji Kishida: Innovations in Thin-film Formation and Interconnect Technology
Introduction:
Shunji Kishida, an inventive engineer based in Tokyo, Japan, has made significant contributions to the field of thin-film formation and interconnect technology. With a total of four patents, Kishida has demonstrated his expertise in developing efficient methods and devices for achieving high-quality thin film and interconnect deposition. This article delves into the details of his two latest patents and highlights his collaboration with fellow inventors at NEC Corporation.
Thin-film Formation Device and Method:
One of Shunji Kishida's recent patents focuses on a thin-film formation device. The device comprises a light irradiating optical system that directs a light of predetermined intensity onto the substrate, a light detecting optical system that measures the intensity of reflected light from the substrate's surface, and a thin-film formation controller. This controller stops the film formation process when the intensity of the reflected light reaches its maximum value.
The primary advantage of this arrangement is the capability to halt film formation precisely and automatically when the intensity of the reflected light indicates the smoothest possible thin film. This invention promises a more efficient and smoother thin-film deposition process, leading to enhanced performance and reliability in various applications.
Method for Forming an Aluminum Interconnect Film:
Kishida's second patent delves into the realm of interconnect technology, proposing a method for forming an aluminum film used as an interconnect. This method involves covering the entire surface of a contact hole or via-hole with a film composed of either a refractory metal or a refractory metal compound. Subsequently, an aluminum film is deposited using a chemical vapor deposition (CVD) process.
What sets Kishida's interconnect solution apart is the ability to achieve excellent step-coverage, even in small diameter or high aspect ratio structures. By growing the aluminum film with organic aluminum or trialkylamine-alane as the source material within a specific substrate temperature range, the final deposited film avoids the formation of voids, ensuring proper electrical contact and conduction.
NEC Corporation and Collaborators:
Shunji Kishida has been an essential part of the NEC Corporation's research and development team. NEC Corporation is a renowned multinational information technology and electronics company based in Tokyo, Japan. With an impressive track record in innovation and cutting-edge technologies, NEC Corporation has played a significant role in shaping the tech industry.
During his tenure at NEC Corporation, Kishida has collaborated with prominent inventors such as Kazumi Sugai and Hiroyuki Yokoyama. Their combined efforts have resulted in notable advancements, including the thin-film formation device and method, as well as the improved interconnect film deposition technique.
Conclusion:
Through his innovative ideas and problem-solving approach, Shunji Kishida has proven himself as an exceptional engineer in the areas of thin-film formation and interconnect technology. His patents, particularly in the development of a thin-film formation device and an advanced method for aluminum interconnect film deposition, demonstrate Kishida's commitment to improving the performance and quality of electronic devices. Collaborating with fellow inventors at NEC Corporation further reinforces Kishida's dedication to advancing technology within the company.