Nec Corporation

Shunji Kishida

Kazumi Sugai

Hiroyuki Yokoyama

Yukio Morishige

Akiko Kobayashi

Fumihiko Uesugi

Hidekazu Okabayashi

Kunihiko Washio

Disclosed is a thin-film formation device which has a light irradiating optical system 13 for irradiating a light of predetermined intensity to the substrate 21 which is subject to film formation, a light detecting optical system 14 for detecting the intensity of the reflected light from the surface of the substrate 21, and a thin-film formation controller 15 which stops the film formation by controlling a material introducing system 11 when the intensity of reflected light takes a maximum value. The device is so arranged that the film formation operation can be stopped when the intensity of reflected light takes a maximum value thereby providing a smoothest thin film.

Thin-film formation device and method

A method for forming an interconnect comprises the steps of first covering an overall surface including a surface of a contact hole or a via-hole with a film of one of refractory metal and refractory metal compound and then depositing on the covered surface an aluminum film grown by a chemical vapor deposition (CVD) process using organic aluminum or trialkylamine-alane as a source material under a substrate temperature between 100.degree. C. and 180.degree. C. The organic aluminum is one of dimethylaluminum hydride, tri-isobutyl aluminum, trimethylamine-alane, and diethylaluminum hydride. The trialkylamine-alane is one of trimethylamine-alane and triethylamine-alane. Such aluminum film has good step-coverage so that, even when the diameter is small and the aspect ratio is high, the film can be deposited without an void being formed in the deposited film in the contact hole or the via-hole.

Method for forming an aluminum film used as an interconnect in a

In a method for forming a patterned layer by the selective CVD, the material gas for forming a patterned layer is introduced into a CVD chamber in which a semiconductor substrate is set, and then the CVD process is carried out at a predetermined temperature of the substrate while a light having a predetermined wavelength is irradiated selectively through a mask having a predetermined pattern on the substrate. The CVD layer grows on the area of the surface of the substrate where the light is not irradiated, however, the CVD growth is hindered on the area where the light is irradiated, by the presence of a thin layer which prevent the CVD growth, for example.

Method for forming a patterned layer by selective chemical vapor

According to a method and apparatus for inducing a photochemical reaction, a substrate is placed in a closed cell with a window for transmitting an ultraviolet beam therethrough and is located to oppose the window, a gas is filled to cause the phtoochemical reaction upon irradiation of the ultraviolet beam into the cell, ultraviolet pulses are repetitively controlled to emit at a predetermined intensity, an ultraviolet beam size and shape are adjusted in accordance with a size and a shape of an irradiation portion of the substrate, the repetition frequency of the ultraviolet beam is adjusted and set to effectively cause the photochemical reaction on the substrate in accordance with the adjusted ultraviolet beam size and shape, and the ultraviolet beam having the set beam size and shape at the repetition frequency is irradiated through the window of the cell.

Growing community of inventors

Tokyo, Japan

Shunji Kishida