The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 1996
Filed:
Nov. 06, 1995
NEC Corporation, Tokyo, JP;
Abstract
A method for forming an interconnect comprises the steps of first covering an overall surface including a surface of a contact hole or a via-hole with a film of one of refractory metal and refractory metal compound and then depositing on the covered surface an aluminum film grown by a chemical vapor deposition (CVD) process using organic aluminum or trialkylamine-alane as a source material under a substrate temperature between 100.degree. C. and 180.degree. C. The organic aluminum is one of dimethylaluminum hydride, tri-isobutyl aluminum, trimethylamine-alane, and diethylaluminum hydride. The trialkylamine-alane is one of trimethylamine-alane and triethylamine-alane. Such aluminum film has good step-coverage so that, even when the diameter is small and the aspect ratio is high, the film can be deposited without an void being formed in the deposited film in the contact hole or the via-hole.