Hsinchu, Taiwan

Shun-Wu Lin

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shun-Wu Lin. Retrieved from https://idiyas.com/inventor/shun-wu-lin-vta59uhe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Shun-Wu Lin: Innovator in Semiconductor Technology

Introduction

Shun-Wu Lin is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Shun-Wu Lin holds a patent for "Semiconductor devices including backside power rails and methods of manufacture." This patent describes a method of forming a semiconductor device that includes performing ion implantation on a substrate and etching the substrate. The process involves forming a transistor on one side of the substrate, performing ion implantation on the opposite side, etching the substrate to create a recess, and forming a dielectric layer within that recess.

Career Highlights

Shun-Wu Lin is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has been instrumental in advancing semiconductor device manufacturing techniques.

Collaborations

Some of his notable coworkers include Chun-Hung Wu and Chia-Ling Chung, who have also contributed to the field of semiconductor technology.

Conclusion

Shun-Wu Lin's innovative work in semiconductor devices showcases his expertise and commitment to advancing technology in this critical field. His contributions continue to influence the semiconductor industry significantly.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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