Shun-Siang Jhan

Title: Shun-Siang Jhan: Innovator in Semiconductor Technology

Introduction

Shun-Siang Jhan is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent. His work focuses on improving the efficiency and performance of semiconductor devices.

Latest Patents

Shun-Siang Jhan holds a patent for a "Semiconductor device with improved source/drain contact and method for forming the same." This patent describes a method that includes forming a 2-D semiconductor material layer over a substrate. It also involves creating source/drain contacts over the source/drain regions of the 2-D semiconductor material layer and establishing a gate structure over a channel region of the same layer. The process includes a first deposition to lay down a first metal layer, followed by a second deposition of a higher melting point metal layer.

Career Highlights

Throughout his career, Shun-Siang Jhan has worked with notable organizations such as Taiwan Semiconductor Manufacturing Company Ltd. and National Taiwan University. His experience in these institutions has allowed him to refine his skills and contribute to advancements in semiconductor technology.

Collaborations

Shun-Siang Jhan has collaborated with esteemed colleagues, including Ang-Sheng Chou and I-Chih Ni. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Shun-Siang Jhan's contributions to semiconductor technology through his patent and collaborations highlight his role as an influential inventor in the field. His work continues to impact the industry and pave the way for future innovations.