The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Mar. 18, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Shun-Siang Jhan, Kaohsiung, TW;
Ang-Sheng Chou, Hsinchu, TW;
I-Chih Ni, New Taipei, TW;
Chih-I Wu, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A method includes forming a 2-D semiconductor material layer over a substrate; forming source/drain contacts over source/drain regions of the 2-D semiconductor material layer; and forming a gate structure over a channel region of the 2-D semiconductor material layer. Forming the source/drain contacts includes performing a first deposition process to deposit a first metal layer over the 2-D semiconductor material layer; and after the first deposition process is completed, performing a second deposition process to deposit a second metal layer over the first metal layer, in which the second metal layer has a higher melting point than the first metal layer.