Sayama, Japan

Shuji Shibuya

This inventor holds 4 USPTO granted patents. Top assignee: Hitachi, Ltd.. Active years: 2001-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shuji Shibuya. Retrieved from https://idiyas.com/inventor/shuji-shibuya

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 13.0

ph-index = 3

Forward Citations = 18(Granted Patents)


Company Filing History:


Years Active: 2001-2007

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4 patents (USPTO):Explore Patents

Title: The Innovations of Shuji Shibuya

Introduction

Shuji Shibuya is a prominent inventor based in Sayama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing the reliability and productivity of semiconductor devices.

Latest Patents

One of Shuji Shibuya's latest patents involves a semiconductor device and manufacturing method that includes a probe test step and a burn-in test step. This innovation allows for the dispersion of load to be maintained within an allowance, even when multiple probes in a large area are pressed in batch. By applying a pressure load to various locations on the pressure members opposite the wafer, this method improves the probing of a large number of integrated circuits simultaneously. This advancement enhances both the reliability and productivity of semiconductor devices.

Career Highlights

Shuji Shibuya is associated with Hitachi, Ltd., a leading company in the technology sector. His work at Hitachi has allowed him to develop groundbreaking technologies that have a lasting impact on the semiconductor industry.

Collaborations

Shuji has collaborated with notable coworkers, including Ryuji Kohno and Tetsuo Kumazawa. Their combined expertise has contributed to the success of various projects within the semiconductor field.

Conclusion

Shuji Shibuya's innovations in semiconductor technology demonstrate his commitment to enhancing device reliability and productivity. His contributions continue to shape the future of the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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