Hitachi, Ltd.

Shuji Shibuya

Makoto Kitano

Ryuji Kohno

Susumu Kasukabe

Yasuhiro Motoyama

Tetsuo Kumazawa

Kunio Matsumoto

Hidetaka Shigi

Naoto Ban

Akihiko Ariga

Yuji Wada

Terutaka Mori

Takayoshi Watanabe

Dispersion of load may be kept within an allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane to a wafer by applying a pressure load to a plurality of places of a plane of pressure members on the side opposite from the wafer in a probe test step/burn-in test step which is one of semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit in the same time.

Semiconductor device and manufacturing method thereof including a probe test step and a burn-in test step

Dispersion of a load may be kept within a predetermined allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane against a wafer by applying a pressure load to a plurality of places on a plane of the pressure members on the side opposite the wafer in a probe test step, burn-in test step which represent typical semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit at the same time.

Growing community of inventors

Sayama, Japan

Shuji Shibuya