Company Filing History:
Years Active: 2015-2018
Title: Innovations of Shu-Hsuan Lin
Introduction
Shu-Hsuan Lin is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory devices, holding a total of 3 patents. His work focuses on enhancing the performance and efficiency of memory circuits.
Latest Patents
One of his latest patents is related to sense amplifier circuits. This invention includes a single-ended sense amplifier and an isolation switch. The isolation switch is coupled between a bias node and a first line of a memory device, receiving an output from the single-ended sense amplifier and selectively isolating the bias node and the first line based on this output. The first line is connected to multiple memory cells of the memory device.
Another notable patent is for memory devices and control methods thereof. This memory device features a first signal line and a memory cell array divided into two areas. It contains a plurality of first memory cells and second memory cells, each having a reference node. A first voltage adjustment circuit is designed to adjust the voltages at the reference nodes of the first memory cells, which includes a switch controlled by an address signal and a bias element. Additionally, a second voltage adjustment circuit is responsible for adjusting the voltages at the reference nodes of the second memory cells.
Career Highlights
Shu-Hsuan Lin is currently employed at MediaTek Corporation, where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and reliable.
Collaborations
He has collaborated with notable coworkers, including Chia-Wei Wang and Shu-Lin Lai, contributing to various projects and innovations within the company.
Conclusion
Shu-Hsuan Lin's contributions to memory device technology through his patents and work at MediaTek Corporation highlight his role as a key innovator in the field. His inventions are paving the way for advancements in memory technology, showcasing the importance of innovation in this sector.
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