Shobha Sing

Title: Shobha Sing: Innovator in Semiconductor Device Fabrication

Introduction

Shobha Sing is a notable inventor based in Summit, NJ (US). She has made significant contributions to the field of semiconductor devices, particularly through her innovative use of borosilicate glass in device fabrication. Her work has implications for the efficiency and effectiveness of semiconductor manufacturing processes.

Latest Patents

Shobha Sing holds 1 patent for her invention titled "Devices and device fabrication with borosilicate glass." This patent describes semiconductor devices made using a process that involves specific types of glass layers. These glass layers are characterized by high silica content, small amounts of boron oxide, and optionally small amounts of aluminum oxide. The application of these glass layers is facilitated by an e-beam deposition procedure utilizing a glass target made from restructured glass. The commercial availability of such glass enhances the convenience of the fabrication process. These glass layers serve as barrier layers during annealing procedures used in doping semiconductors, such as ion implantation, and as encapsulating layers in finished devices.

Career Highlights

Shobha Sing has had a distinguished career, working at American Telephone & Telegraph Co. and AT&T Bell Laboratories. Her role in these organizations has allowed her to contribute to cutting-edge research and development in semiconductor technology.

Collaborations

Throughout her career, Shobha has collaborated with esteemed colleagues, including Gou-Chung Chi and Legrand G Van Uitert. These collaborations have further enriched her work and expanded the impact of her inventions.

Conclusion

Shobha Sing's innovative approach to semiconductor device fabrication using borosilicate glass highlights her significant contributions to the field. Her patent and career achievements reflect her dedication to advancing technology in the semiconductor industry.