American Telephone & Telegraph Co., At&t Bell Laboratories

Shobha Sing

George J Zydzik

Legrand G Van Uitert

Gou-Chung Chi

Semiconductor devices are described which are made by a process involving the use of certain types of glass layers. These glass layers have high silica content, small amounts of boron oxide and optionally small amounts of aluminum oxide. The glass layers are put down by e-beam deposition procedure using a glass target made from restructured glass. Commercial availability of such glass makes the procedure very convenient. Such glass layers are advantageously used as barrier layers in annealing procedures used when semiconductors are doped (e.g., ion implantation in semiconductors) and as encapsulating layers in finished devices.

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Summit, NJ, United States of America

Shobha Sing