The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 1989
Filed:
Dec. 22, 1986
Gou-Chung Chi, New Providence, NJ (US);
Shobha Sing, Summit, NJ (US);
LeGrand G Van Uitert, Morris Township, Morris County, NJ (US);
George J Zydzik, Columbia, NJ (US);
American Telephone and Telegraph Co. AT&T Laboratories, Murray Hill, NJ (US);
Abstract
Semiconductor devices are described which are made by a process involving the use of certain types of glass layers. These glass layers have high silica content, small amounts of boron oxide and optionally small amounts of aluminum oxide. The glass layers are put down by e-beam deposition procedure using a glass target made from restructured glass. Commercial availability of such glass makes the procedure very convenient. Such glass layers are advantageously used as barrier layers in annealing procedures used when semiconductors are doped (e.g., ion implantation in semiconductors) and as encapsulating layers in finished devices.