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For the Inventor, By the Inventor

Taipei, Taiwan

Shiou-Yu Wang

USPTO Granted Patents = 11

Average Co-Inventor Count = 3.4

ph-index = 6

Forward Citations = 62(Granted Patents)


Company Filing History:

goldMedal11 out of 2,305 
 
Nan Ya Technology Corporation
 patents

Years Active: 1999-2002

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11 patents (USPTO):Explore Patents
1. 6403418 - Method of fabricating cup-shape cylindrical capacitor of high density DRAMs (2002-06-11),
2. 6337173 - Method for fabricating a semiconductor capacitor (2002-01-08),
3. 6320416 - Input buffer means for high voltage operation (2001-11-20),
4. 6180993 - Ion repulsion structure for fuse window (2001-01-30),
5. 6115834 - Method for quickly identifying floating cells by a bit-line coupling (2000-09-05),
6. 6057187 - DRAM structure with multiple memory cells sharing the same bit-line (2000-05-02),
7. 5989952 - Method for fabricating a crown-type capacitor of a DRAM cell (1999-11-23),
8. 5966610 - Method of fabricating capacitor plate (1999-10-12),
9. 5960295 - Method for fabricating a storage plate of a semiconductor capacitor (1999-09-28),
10. 5955757 - Dram structure with multiple memory cells sharing the same bit-line (1999-09-21),
11. 5923989 - Method of fabricating rugged capacitor of high density DRAMs (1999-07-13),

Title: Innovations of Shiou-Yu Wang in Semiconductor Technology

Introduction

Shiou-Yu Wang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced capacitor designs for high-density Dynamic Random Access Memory (DRAM) applications. With a total of 11 patents to his name, Wang's work has had a substantial impact on the electronics industry.

Latest Patents

One of Wang's latest patents is titled "Method of fabricating cup-shape cylindrical capacitor of high density DRAMs." This innovative method involves several steps, including the deposition of a first polysilicon layer on a silicon substrate, the formation of a third dielectric layer, and the use of conventional lithography and etching techniques to define the capacitor shape. The process culminates in the creation of a cup shape cylindrical capacitor, which is essential for high-density DRAM applications. Another notable patent is the "Method for fabricating a semiconductor capacitor," which outlines a procedure for creating a capacitor electrode on a semiconductor substrate. This method includes forming a conducting layer, applying a photoresist layer, and utilizing an interfering exposure step to pattern the conducting layer.

Career Highlights

Shiou-Yu Wang is currently employed at Nan Ya Technology Corporation, where he continues to innovate in the semiconductor field. His expertise in capacitor fabrication has positioned him as a key player in the development of next-generation memory technologies. Wang's contributions have not only advanced the technical capabilities of DRAM but have also enhanced the overall performance of electronic devices.

Collaborations

Wang has collaborated with several talented individuals in his field, including Tean-Sen Jen and Jia-Shyong Cheng. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Shiou-Yu Wang's work in semiconductor technology exemplifies the spirit of innovation that drives the electronics industry forward. His patents and contributions are a testament to his expertise and dedication to advancing technology.

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