The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Sep. 15, 1998
Shiou-Yu Wang, Taipei, TW;
Tean-Sen Jen, Chiai, TW;
Nanya Technology Corp., , TW;
Abstract
An ion repulsion structure for a fuse window is provided. The ion repulsion structure includes multi-level metallic layers and a P-type silicon semiconductor substrate having a plurality of wells. The P-type silicon semiconductor substrate includes an N-type well, a P-type well formed in the N-type well and a plurality of P+ type diffusion regions formed in the P-type well. A fuse element is formed on the P-type silicon semiconductor substrate. A fuse window layer is formed over the fuse element. Multi-level metallic layers surrounding the fuse window are formed. A plurality of contact plugs is electrically connected between the P+ type diffusion regions of the semiconductor substrate and the lowest metallic layer. A plurality of via plugs electrically connect the multi-level metallic layers to each other.