The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2002
Filed:
Dec. 10, 1998
Applicant:
Inventors:
Assignee:
Nanya Technology Corporation, Taoyuan, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/26 ; G03H 1/00 ;
U.S. Cl.
CPC ...
G03F 7/26 ; G03H 1/00 ;
Abstract
A method for fabricating a capacitor electrode on a semiconductor substrate includes the steps of: forming a conducting layer over the semiconductor substrate; forming a photoresist layer over the conducting layer; pattering the photoresist layer through an interfering exposure step; and pattering the conducting layer using the patterned photoresist layer as a mask, thereby forming a capacitor electrode.