Shinya Kusunoki

Title: Shinya Kusunoki: Innovator in Aluminum Nitride Substrates

Introduction

Shinya Kusunoki is a prominent inventor based in Sendai, Japan. He has made significant contributions to the field of semiconductor materials, particularly through his innovative work on aluminum nitride substrates. With a total of 2 patents, Kusunoki's inventions are paving the way for advancements in semiconductor technology.

Latest Patents

Kusunoki's latest patents include the development of an aluminum nitride single-crystal multi-layered substrate. This substrate comprises an aluminum nitride single-crystal layer formed by direct reduction nitridation on a single-crystal α-alumina substrate, such as a sapphire substrate. It features an edge-type dislocation layer with a thickness of 10 nm or less at the interface between the two crystals. Notably, threading dislocation is rarely present in the aluminum nitride single-crystal layer on the surface, making it highly useful as a semiconductor device substrate.

Another significant patent is for a highly crystalline aluminum nitride multi-layered substrate. This substrate consists of a single-crystal α-alumina substrate, an aluminum oxynitride layer, and a highly crystalline aluminum nitride film as the outermost layer. The aluminum oxynitride layer has a threading dislocation density of 6.3×10/cm or less and a crystal orientation characterized by a half-value width of its rocking curve of 4,320 arcsec or less. This innovation also includes a production process for the substrate.

Career Highlights

Throughout his career, Shinya Kusunoki has worked with notable companies, including Tokuyama Corporation and the Circle for the Promotion of Science and Engineering. His expertise in materials science and engineering has allowed him to contribute significantly to the development of advanced semiconductor substrates.

Collaborations

Kusunoki has collaborated with esteemed colleagues such as Hiroyuki Fukuyama and Kazuya Takada. These partnerships have further enhanced his research and development efforts in the field of semiconductor materials.

Conclusion

Shinya Kusunoki's innovative work in aluminum nitride substrates showcases his dedication to advancing semiconductor technology. His patents reflect a commitment to improving the performance and reliability of semiconductor devices. Through his career and collaborations, Kusunoki continues to make a lasting impact in the field.