The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2009
Filed:
Feb. 06, 2006
Hiroyuki Fukuyama, Sendai, JP;
Shinya Kusunoki, Sendai, JP;
Katsuhito Nakamura, Sendai, JP;
Kazuya Takada, Shunan, JP;
Akira Hakomori, Shunan, JP;
Hiroyuki Fukuyama, Sendai, JP;
Shinya Kusunoki, Sendai, JP;
Katsuhito Nakamura, Sendai, JP;
Kazuya Takada, Shunan, JP;
Akira Hakomori, Shunan, JP;
Tokuyama Corporation, Yamaguchi, JP;
Tohoku University, Miyagi, JP;
Tokyo Institute of Technology, Tokyo, JP;
Abstract
An aluminum nitride single-crystal multi-layered substrate comprising an aluminum nitride single-crystal layer formed by direct reduction nitridation on a single-crystal α-alumina substrate such as a sapphire substrate and an edge-type dislocation layer having a thickness of 10 nm or less in the vicinity of the interface between the both crystals. Threading dislocation is rarely existent in the aluminum nitride single-crystal layer existent on the surface. It is useful as a semiconductor device substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile