Kanagawa, Japan

Shinobu Furukawa

This inventor holds 18 USPTO granted patents, primarily in Organic Transistors. Top assignee: Semiconductor Energy Laboratory Co., Ltd.. Active years: 2009-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shinobu Furukawa. Retrieved from https://idiyas.com/inventor/shinobu-furukawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 2.4

ph-index = 5

Forward Citations = 61(Granted Patents)


Location History:

  • Atsugi, JP (2011 - 2014)
  • Kanagawa, JP (2009 - 2016)

Company Filing History:


Years Active: 2009-2016

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Areas of Expertise:
Organic Transistor
Semiconductor Device
Thin Film Transistor
Light-Emitting Device
Manufacturing Method
Organic Field-Effect Transistor
Electronic Device
Composite Electrode
Display Device
Organic Semiconductor Layer
18 patents (USPTO):Explore Patents

Title: **Shinobu Furukawa: Innovator in Semiconductor Technology**

Introduction

Shinobu Furukawa, an accomplished inventor based in Kanagawa, Japan, holds an impressive portfolio of 18 patents that contribute significantly to the field of semiconductor technology. His innovative approaches have led to advancements in etching methods and the manufacturing of organic transistors, playing a crucial role in the electronics industry.

Latest Patents

Among his latest patents is an etching method using mixed gas that enhances etching selectivity between amorphous and crystalline semiconductor films. This method involves using a mixed gas of bromine, fluorine, and oxygen to effectively etch a portion of a stacked semiconductor film, which results in a high-quality exposed crystalline semiconductor surface. Such advancements are especially beneficial in creating thin film transistors with favorable electric characteristics.

Another notable invention pertains to organic transistors, aimed at developing high-quality gate insulating films with strong insulation resistance properties. This invention utilizes a method of forming a conductive layer that acts as a gate electrode through plasma activation, ensuring minimal tunneling leakage current and enhancing device reliability.

Career Highlights

Shinobu Furukawa is associated with the Semiconductor Energy Laboratory Co., Ltd., a company that focuses on cutting-edge semiconductor technologies. His work has laid the groundwork for significant advancements in the efficiency and performance of semiconductor devices, underscoring his importance in this specialized field.

Collaborations

Throughout his career, Shinobu has collaborated with notable peers, including Ryota Imahayashi and Shunpei Yamazaki. These collaborations have enabled the exchange of ideas and fostered innovation, resulting in advancements that push the boundaries of semiconductor technology.

Conclusion

Shinobu Furukawa's contributions to semiconductor research and development are noteworthy, with 18 patents to his name that reflect his innovative spirit and technical expertise. His continued work not only enhances the functionality of electronic devices but also sets the stage for future advancements in the industry. As technology continues to evolve, the impact of his inventions will undoubtedly remain significant.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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