The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
May. 27, 2010
Hidekazu Miyairi, Kanagawa, JP;
Yasuhiro Jinbo, Kanagawa, JP;
Hiromichi Godo, Kanagawa, JP;
Takafumi Mizoguchi, Kanagawa, JP;
Shinobu Furukawa, Kanagawa, JP;
Hidekazu Miyairi, Kanagawa, JP;
Yasuhiro Jinbo, Kanagawa, JP;
Hiromichi Godo, Kanagawa, JP;
Takafumi Mizoguchi, Kanagawa, JP;
Shinobu Furukawa, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A thin film transistor in which an effect of photo current is small and an On/Off ratio is high is provided. In a bottom-gate bottom-contact (coplanar) thin film transistor, a channel formation region overlaps with a gate electrode, a first impurity semiconductor layer is provided between the channel formation region and a second impurity semiconductor layer which is in contact with a wiring layer. A semiconductor layer which serves as the channel formation region and the first impurity semiconductor layer preferably overlap with each other in a region where they overlap with the gate electrode. The first impurity semiconductor layer and the second impurity semiconductor layer preferably overlap with each other in a region where they do not overlap with the gate electrode.