The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2013

Filed:

Dec. 05, 2005
Applicants:

Nobuharu Ohsawa, Zama, JP;

Yoshiharu Hirakata, Ebina, JP;

Shinobu Furukawa, Atsugi, JP;

Inventors:

Nobuharu Ohsawa, Zama, JP;

Yoshiharu Hirakata, Ebina, JP;

Shinobu Furukawa, Atsugi, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

It is an object to provide an electrode for an organic field-effect transistor having a semiconductor layer formed of an organic semiconductor material (in the present invention, referred to as an organic field-effect transistor), which can reduce the energy barrier at an interface with the semiconductor layer. A composite layer including an organic compound and a metal oxide is used for the electrode for the organic field-effect transistor, in other words the composite layer is used for at least a part of either a source electrode or a drain electrode in the organic field-effect transistor.


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