Tokyo, Japan

Shinichiro Katsuki

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Mitsubishi Electric Corporation. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shinichiro Katsuki. Retrieved from https://idiyas.com/inventor/shinichiro-katsuki-khv7d1ch

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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2 patents (USPTO):Explore Patents

Title: Innovations by Shinichiro Katsuki

Introduction

Shinichiro Katsuki is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon carbide (SiC) devices. With a total of 2 patents, his work has been instrumental in advancing manufacturing processes in this area.

Latest Patents

Katsuki's latest patents include a silicon carbide epitaxial growth device and a method of manufacturing silicon carbide epitaxial wafers. The silicon carbide epitaxial growth device is designed to foster epitaxial growth on a silicon carbide substrate. It features a wafer holder loaded with a silicon carbide substrate and a tantalum carbide member mounted to a turntable in a susceptor. By supplying a growth gas, a doping gas, and a carrier gas into the susceptor through induction heating coils, the device achieves stable and proper characteristics while significantly improving the yield in the manufacturing of silicon carbide epitaxial wafers.

The method of manufacturing semiconductor devices aims to suppress variations in the thickness of oxide films among multiple SiC wafers. This process involves forming first inorganic films on the lower surfaces of several SiC wafers, followed by etching to retain a thickness of 750 nm or more. Subsequently, oxide films are formed on the upper surfaces through thermal oxidation treatment, ensuring consistency across the wafers.

Career Highlights

Shinichiro Katsuki is currently employed at Mitsubishi Electric Corporation, where he continues to innovate in semiconductor technology. His expertise and dedication have positioned him as a key figure in the industry.

Collaborations

Katsuki has collaborated with notable colleagues, including Kyohei Akiyoshi and Atsushi Yoshida. Their combined efforts have contributed to the advancement of semiconductor manufacturing techniques.

Conclusion

Shinichiro Katsuki's work in silicon carbide technology exemplifies the impact of innovation in the semiconductor industry. His patents reflect a commitment to improving manufacturing processes and device performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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