Shing-Hwa Renn is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His innovative work focuses on advanced transistor designs and capacitor structures, which are crucial for modern electronic devices.

Latest Patents

Among his latest patents is the "Dual vertical channel transistor and fabrication method thereof." This invention features a unique tuning fork-shaped substrate body, which includes a buried bit line and an out-diffused drain region. The design also incorporates a source region at the top of each prong of the substrate body, along with a front gate and a back gate situated on opposite sides. Another notable patent is the "Capacitor formation for a pumping circuit," which describes a capacitor structure that utilizes a U-shaped bottom electrode and a T-shaped top electrode, enhancing the contact area through cubic engagement.

Career Highlights

Shing-Hwa Renn is currently employed at Nan Ya Technology Corporation, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in developing technologies that improve the efficiency and performance of electronic components.

Collaborations

Throughout his career, Shing-Hwa has collaborated with notable colleagues, including Chung-Ren Li and Yu-Teh Chiang. These partnerships have fostered a creative environment that has led to groundbreaking advancements in their field.

Conclusion

Shing-Hwa Renn's contributions to transistor and capacitor technologies exemplify his dedication to innovation in the semiconductor industry. His patents reflect a deep understanding of electronic design, making him a key figure in advancing modern technology.

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