The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2011

Filed:

Dec. 10, 2009
Applicants:

Shing-hwa Renn, Taoyuan County, TW;

Cheng-chih Huang, Taipei County, TW;

Yung-meng Huang, Taoyuan County, TW;

Inventors:

Shing-Hwa Renn, Taoyuan County, TW;

Cheng-Chih Huang, Taipei County, TW;

Yung-Meng Huang, Taoyuan County, TW;

Assignee:

Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

An embedded bit line structure, in which, a substrate includes an insulator layer having an original top surface and a semiconductor layer on the original top surface of the insulator layer, and a bit line is disposed within the lower portion of the trench along one side of an active area. The bit line includes a first portion and a second portion. The first portion is located within the insulator layer and below the original top surface of the insulator layer. The second portion is disposed on the first portion to electrically connect the semiconductor layer of the active area. An insulator liner is disposed on the first portion of the bit line and between the second portion of the bit line and the semiconductor layer of the substrate opposite the active area for isolation. An STI is disposed within the trench to surround the active area for isolation.


Find Patent Forward Citations

Renn, Shing-Hwa. (2011). Embedded bit line structure, field effect transistor structure with the same and method of fabricating the same (U.S. Patent No. 7948027). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7948027

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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