Jiangsu, China

Shilin Fang

This inventor holds 2 USPTO granted patents. Top assignees: Csmc Technologies Fab1 Co., Ltd., Csmc Technologies Fab2 Co., Ltd.. Active years: 2015-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shilin Fang. Retrieved from https://idiyas.com/inventor/shilin-fang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.5

ph-index = 1


Company Filing History:


Years Active: 2015-2016

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2 patents (USPTO):Explore Patents

Title: Shilin Fang: Innovator in Semiconductor Manufacturing

Introduction

Shilin Fang is a prominent inventor based in Jiangsu, China. He has made significant contributions to the field of semiconductor manufacturing, holding 2 patents that address critical challenges in the industry. His innovative approaches have paved the way for advancements in semiconductor device fabrication.

Latest Patents

One of Shilin Fang's latest patents is a method for manufacturing a semiconductor device. This method effectively resolves issues in prior art where silicon on the edge of an oxide layer in an LDMOS drift region is prone to exposure, leading to device breakdown. The process involves providing a semiconductor substrate with both LDMOS and CMOS regions, forming a sacrificial oxide layer, and utilizing a masking layer to create an LDMOS drift region. This method is particularly applicable to BCD processes and similar applications.

Another notable patent is for manufacturing a semiconductor thick metal structure. This method includes several steps: thick metal deposition, metal patterning, and passivation. In the deposition step, a Ti-TiN laminated structure serves as an anti-reflection layer, allowing for 4 µm metal etching without residue. The metal patterning step employs a protective sidewall to achieve a nearly 90-degree tilt angle on a 4 µm metal concave-convex structure. The final product features a linewidth/gap of 1.5 µm/1.5 µm, showcasing effective passivation protection for metal gaps.

Career Highlights

Shilin Fang has worked with notable companies in the semiconductor industry, including CSMC Technologies Fab2 Co., Ltd. and CSMC Technologies Fab1 Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor manufacturing processes.

Collaborations

Throughout his career, Shilin Fang has collaborated with talented individuals such as Zhengpei Chen and Shu Zhang. These partnerships have fostered innovation and development in semiconductor technologies.

Conclusion

Shilin Fang's contributions to semiconductor manufacturing through his patents and collaborations highlight his role as an influential inventor in the field. His innovative methods continue to advance the industry and address critical challenges in semiconductor device fabrication.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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