The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Nov. 28, 2012
Csmc Technologies Fab1 Co., Ltd., Jiangsu, CN;
Hsiaochia Wu, Jiangsu, CN;
Shilin Fang, Jiangsu, CN;
Tsehuang Lo, Jiangsu, CN;
Zhengpei Chen, Jiangsu, CN;
Shu Zhang, Jiangsu, CN;
Yanqiang He, Jiangsu, CN;
CSMC TECHNOLOGIES FABI CO., LTD., Jiangsu, CN;
Abstract
A method for manufacturing a semiconductor device according to this specification solves the problem in the prior art that the silicon on the edge of an oxide layer in an LDMOS drift region is easily exposed and causes breakdown of an LDMOS device. The method includes: providing a semiconductor substrate comprising an LDMOS region and a CMOS region; forming a sacrificial oxide layer on the semiconductor substrate; removing the sacrificial oxide layer; forming a masking layer on the semiconductor substrate after the sacrificial oxidation treatment; using the masking layer as a mask to form an LDMOS drift region, and forming a drift region oxide layer above the drift region; and removing the masking layer. The method is applicable to a BCD process and the like.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile