Shih-Feng Su

Title: Shih-Feng Su: Innovator in Semiconductor Technology

Introduction

Shih-Feng Su is a prominent inventor based in Kao-Hsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative methods for fabricating semiconductor devices, which are crucial for the advancement of electronic components.

Latest Patents

One of his latest patents is titled "Method for Fabricating Semiconductor Device." This patent discloses a method that includes several steps: providing a substrate, forming a dielectric layer on the substrate that comprises metal interconnects, forming a top metal layer on the dielectric layer, and finally, forming a passivation layer on the top metal layer through a high-density plasma chemical vapor deposition (HDPCVD) process.

Another notable patent is "Method of High Density Plasma Gap-Filling with Minimization of Gas Phase Nucleation." This method involves providing a substrate with a trench in a reaction chamber. The process includes a first deposition step to partially fill a dielectric material in the trench, followed by an etch step to remove some of the dielectric material. A second deposition step is then performed, utilizing a reaction gas that includes a carrier gas, an oxygen-containing gas, a silicon-containing gas, and a hydrogen-containing gas.

Career Highlights

Shih-Feng Su is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to develop and refine his innovative techniques in semiconductor fabrication.

Collaborations

Throughout his career, Shih-Feng has collaborated with several talented individuals, including Shu-Hui Hu and Hui-Shen Shih, who have contributed to his research and development efforts.

Conclusion

Shih-Feng Su is a notable inventor whose work in semiconductor technology has led to significant advancements in the field. His innovative patents reflect his expertise and commitment to improving semiconductor fabrication methods.