United Microelectronics Corp.

Shih-Feng Su

Chih-Chien Liu

Chin-Fu Lin

Bin-Siang Tsai

Hui-Shen Shih

Po-Chun Chen

Ya-Jyuan Hung

Shu-Hui Hu

A method for fabricating a semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a dielectric layer on the substrate, wherein the dielectric layer comprises metal interconnects therein; forming a top metal layer on the dielectric layer; and forming a passivation layer on the top metal layer through high-density plasma chemical vapor deposition (HDPCVD) process.

Method for fabricating semiconductor device

A method of high density plasma (HDP) gap-filling with a minimization of gas phase nucleation (GPN) is provided. The method includes providing a substrate having a trench in a reaction chamber. Next, a first deposition step is performed to partially fill a dielectric material in the trench. Then, an etch step is performed to partially remove the dielectric material in the trench. Thereafter, a second deposition step is performed to partially fill the dielectric material in the trench. A reaction gas used in the second deposition step includes a carrier gas, an oxygen-containing gas, a silicon-containing gas, and a hydrogen-containing gas. After the carrier gas and oxygen-containing gas are introduced into the reaction chamber and a radio frequency (RF) power is turned on for a period of time, the silicon-containing gas and hydrogen-containing gas are introduced into the reaction chamber.

Method of high density plasma gap-filling with minimization of gas phase nucleation

Growing community of inventors

Kao-Hsiung, Taiwan

Shih-Feng Su