The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2013
Filed:
Jul. 07, 2011
Shu-hui HU, Tainan, TW;
Shih-feng Su, Kao-Hsiung, TW;
Hui-shen Shih, Changhua County, TW;
Chih-chien Liu, Taipei, TW;
Po-chun Chen, Tainan, TW;
Ya-jyuan Hung, Kaohsiung, TW;
Bin-siang Tsai, Changhua County, TW;
Chin-fu Lin, Tainan, TW;
Shu-Hui Hu, Tainan, TW;
Shih-Feng Su, Kao-Hsiung, TW;
Hui-Shen Shih, Changhua County, TW;
Chih-Chien Liu, Taipei, TW;
Po-Chun Chen, Tainan, TW;
Ya-Jyuan Hung, Kaohsiung, TW;
Bin-Siang Tsai, Changhua County, TW;
Chin-Fu Lin, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for fabricating a semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a dielectric layer on the substrate, wherein the dielectric layer comprises metal interconnects therein; forming a top metal layer on the dielectric layer; and forming a passivation layer on the top metal layer through high-density plasma chemical vapor deposition (HDPCVD) process.