Hsinchu, Taiwan

Shih-Cheng Chou

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shih-Cheng Chou. Retrieved from https://idiyas.com/inventor/shih-cheng-chou-dyguouoo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Shih-Cheng Chou and Semiconductor Device Innovation.

Introduction

Shih-Cheng Chou is an inventor associated with Hsinchu, Taiwan, and Taiwan Semiconductor Manufacturing Company Limited. Chou’s patent work concerns semiconductor device design and manufacturing.

Latest Patents

Chou is associated with 1 patent: “Semiconductor Device and Manufacturing Method Thereof.” The disclosed fabrication method forms a first electrode above a substrate with density that increases from its bottom surface to its top surface. A high-K dielectric layer is then formed over the first electrode, followed by a second electrode whose density likewise increases from its bottom surface, which bonds to the dielectric, to its top surface. The patent describes a layered electrode structure with varying density as part of semiconductor device manufacturing.

Career Highlights

Chou’s listed patent reflects work in semiconductor fabrication, particularly electrode and high-K dielectric structures. The available information identifies Taiwan Semiconductor Manufacturing Company Limited as the company associated with Chou.

Collaborations

Chou’s listed coworkers include Wei-Zhong Chen and Szu-Ping Tung. Their names are provided as professional collaborators, though specific joint projects are not detailed in the available information.

Conclusion

Shih-Cheng Chou’s patent highlights an approach to semiconductor manufacturing that uses electrodes with varying density around a high-K dielectric layer.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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