The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Jul. 13, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shih-Cheng Chou, Hsinchu, TW;
Wei-Zhong Chen, Taipei, TW;
Szu-Ping Tung, Taipei, TW;
Hsiao-Kuan Wei, Taoyuan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A fabrication method includes: forming, above a substrate, a first electrode having a varying density that increases from a first density level at a bottom surface of the first electrode to a second density level that is higher than the first density level at a top surface of the first electrode; forming a high-K dielectric layer over the first electrode; and forming a second electrode over the HK dielectric layer having a varying density that increases from a third density level at a bottom surface of the second electrode that bonds to the HK dielectric layer to a fourth density level that is higher than the third density level at a top surface of the second electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile