Shih-An Huang

Title: Shih-An Huang: Innovator in Work Function Metal Gate Technology

Introduction

Shih-An Huang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of work function metal gate devices. With a total of 4 patents to his name, Huang continues to push the boundaries of innovation in his field.

Latest Patents

One of Huang's latest patents is a work function metal gate device that includes a gate, a drift region, a source, a drain, and a first isolation structure. The gate features either a convex stair-shaped work function metal stack or a concave stair-shaped work function metal stack that is disposed on a substrate. The drift region is located in the substrate beneath a portion of the gate. The source is situated in the substrate, while the drain is positioned in the drift region adjacent to the gate. Additionally, the first isolation structure is placed in the drift region between the gate and the drain.

Career Highlights

Huang is currently employed at United Microelectronics Corporation, a leading semiconductor foundry. His work at this company has allowed him to collaborate with other talented professionals in the industry, further enhancing his contributions to semiconductor technology.

Collaborations

Some of Huang's notable coworkers include Chih-Wen Huang and Kun-Hsien Lee. Their collaborative efforts have played a crucial role in advancing the projects they work on together.

Conclusion

Shih-An Huang is a key figure in the development of work function metal gate devices, with a strong portfolio of patents that reflect his innovative spirit. His work at United Microelectronics Corporation and collaborations with esteemed colleagues continue to drive advancements in semiconductor technology.