The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
May. 22, 2024
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chih-Wen Huang, Tainan, TW;
Shih-An Huang, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/28 (2006.01); H01L 29/94 (2006.01); H10D 30/01 (2025.01); H10D 30/65 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01); H10D 64/27 (2025.01); H10D 64/66 (2025.01);
U.S. Cl.
CPC ...
H10D 64/518 (2025.01); H01L 21/28088 (2013.01); H01L 21/28114 (2013.01); H10D 30/0281 (2025.01); H10D 30/65 (2025.01); H10D 62/116 (2025.01); H10D 62/393 (2025.01); H10D 64/667 (2025.01);
Abstract
A work function metal gate device includes a gate, a drift region, a source, a drain and a first isolation structure. The gate includes a convex stair-shaped work function metal stack or a concave stair-shaped work function metal stack disposed on a substrate. The drift region is disposed in the substrate below a part of the gate. The source is located in the substrate and the drain is located in the drift region beside the gate. The first isolation structure is disposed in the drift region between the gate and the drain.