Shigeo Yata

Title: Shigeo Yata: Innovator in Photoelectric Conversion Technology

Introduction

Shigeo Yata is a prominent inventor based in Hirakata, Japan. He has made significant contributions to the field of photoelectric conversion devices. With a total of 3 patents to his name, Yata's work has advanced the efficiency and functionality of solar energy technologies.

Latest Patents

Yata's latest patents include a photoelectric conversion device that boasts improved photoelectric conversion efficiency. This innovative device features an amorphous silicon photoelectric conversion unit layered with a microcrystalline silicon photoelectric conversion unit. An intermediate layer, which has a lower refractive index than the adjacent layers, enhances the device's performance. The crystalline fraction of the microcrystalline i-type layer is crucial, as it determines the thickness of the intermediate layer.

Another notable patent is for a p-type zinc oxide semiconductor film. This film is primarily composed of zinc and oxygen and is characterized by the inclusion of an alkali metal and nitrogen. The alkali metal's concentration is strategically distributed to increase toward the ends of the film, optimizing its properties for various applications.

Career Highlights

Shigeo Yata is currently employed at Sanyo Electric Co., Ltd., where he continues to innovate in the field of semiconductor technology. His work has been instrumental in developing advanced materials that enhance the efficiency of electronic devices.

Collaborations

Yata has collaborated with notable colleagues, including Kenichiro Wakisaka and Takeshi Kobayashi. These partnerships have fostered a creative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Shigeo Yata's contributions to photoelectric conversion technology and semiconductor materials have positioned him as a key figure in the field. His innovative patents reflect a commitment to enhancing energy efficiency and advancing technology.