The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2008

Filed:

Jan. 26, 2005
Applicants:

Shigeo Yata, Hirakata, JP;

Kenichiro Wakisaka, Iga, JP;

Takeshi Kobayashi, Osaka, JP;

Inventors:

Shigeo Yata, Hirakata, JP;

Kenichiro Wakisaka, Iga, JP;

Takeshi Kobayashi, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 1/00 (2006.01); H01B 1/12 (2006.01); H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

A p-type ZnO semiconductor film comprised mainly of Zn and O elements is disclosed. The film is characterized as containing an alkali metal and nitrogen. Preferably, the alkali metal is contained such that its concentration is distributed to increase toward an end or toward both ends in the thickness direction of the film. More preferably, the alkali metal is contained in the concentration range of 1×10-5×10cmand the nitrogen in the concentration range of 2×10-5×10cm.


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