The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Sep. 14, 2012
Shigeo Yata, Ogaki, JP;
Shigeo Yata, Ogaki, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
Disclosed is a photoelectric conversion device with improved photoelectric conversion efficiency. In the disclosed photoelectric conversion device, an amorphous silicon photoelectric conversion unit with an amorphous i-type layer and a microcrystalline silicon photoelectric conversion unit with a microcrystalline i-type layer are laminated, and an intermediate layer, which is disposed between the amorphous silicon photoelectric conversion unit and the microcrystalline silicon photoelectric conversion unit, has a lower refractive index than the layers in contact with the front or back surfaces thereof, wherein the higher the crystalline fraction of the microcrystalline i-type layer in the panel surface, the thicker the film of the intermediate layer.